다운로드
(기관인증 필요)
초록보기
Thermoelectric (TE) heating and cooling devices, which are able to directly convert thermal energy into electrical energy and vice versa, are effective and have exhibited a potential for energy harvesting. With the increasing consumer demands for various wearable electronics, organic-based TE composite materials offer a promise for the TE devices applications. Conductive polymers are widely used as flexible TE materials replacing inorganic materials due to their flexibility, low thermal conductivity, mechanical flexibility, ease of processing, and low cost. In this review, we briefly introduce the latest research trends in the flexible TE technology and provide a comprehensive summary of specific conductive polymer-based TE material fabrication technologies. We also summarize the manufacture for high-efficiency TE composites through the complexation of a conductive polymer matrix/inorganic TE filler. We believe that this review will inspire further research to improve the TE performance of conductive polymers.
다운로드
(기관인증 필요)
초록보기
Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites
다운로드
(기관인증 필요)
초록보기
분광학은 재료의 결정학적, 화학적 구조를 분석하기 위해 가장 보편적으로 활용되는 분석 기법이다. 이러한 기조에 따라 다양한 분석 소프트웨어와 peak fitting과 관련된 기술적 가이드라인이 보급되었지만, 정작 '왜' 중간 계산 과정을 거치고 해당 함수를 쓰는지에 대한 논의는 부족한 실정이다. 따라서 본 tutorial에서는 X선 기반 분광광도계를 통해 얻은 데이터 분석의 기초를 논하고자 한다. 이를 위해 관련된 peak fitting을 위해 필요한 실용적 배경지식을 제시하였다. 나아가, 하나의 예시로 임의로 선정한 X선 광전자 분광법 데이터에 대한 curve fitting 과정을 순서에 따라 알기 쉽게 소개하였다. 제시한 기초 이론은 특정 소프트웨어에 국한된 내용이 아니라 fitting tool이 있는 모든 소프트웨어에서 그대로 활용 가능할뿐더러 다른 분광법 데이터를 분석하는 데 적용 가능하기 때문에, 본 내용을 숙지한다면 보다 수월한 연구 진행을 위한 바탕이 될 수 있을 것이라 기대한다.
다운로드
(기관인증 필요)
초록보기
A variable vacuum capacitor (VVC), which is a variable element, is used to match impedance in plasma that changes with various impedance values, and its use is expanding with the rapid growth of the semiconductor business. Since VVCs have to secure insulation performance and vary capacitance within a compact size, electrode design and manufacturing are very important; thus, various technologies such as part design and manufacturing technology and vacuum brazing technology are required. In this study, based on the model of an advanced foreign company that is widely used for impedance matching in the manufacture of semiconductors and displays, a VVC that can realize the same performance was developed. The electrode part was designed, the consistency was confirmed through analysis, and the precision of capacitance was improved by designing a cup-type electrode to secure the concentricity of the electrode. As a result of the evaluation, all requirements was satisfied. We believe that self-development will be possible if satisfactory responses are received through evaluation by VVC consumers in the future.
다운로드
(기관인증 필요)
초록보기
In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.
다운로드
(기관인증 필요)
초록보기
Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.
다운로드
(기관인증 필요)
초록보기
The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (Vfbf) and bottom gate (Vfbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson's equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as Vfbb-Vfbf increases when the projected range is near the top gate, and the SS decreases as Vfbb-Vfbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.
다운로드
(기관인증 필요)
초록보기
High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (VTH ), subthreshold swing (SS), on-state current (ION ), off-state current (IOFF ), and gate leakage (IG ) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO2 interfaces as well as eliminate the bulk trap in SiO2 . It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.
다운로드
(기관인증 필요)
초록보기
We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.
다운로드
(기관인증 필요)
초록보기
An all-solid-state electrochromic film was fabricated by laminating tungsten oxide (WO3 ) and nickel oxide (NiO) thin films deposited by a reactive DC magnetron sputtering on flexible ITO films. The influence of oxygen partial pressure on the crystal structure, microstructure, optical properties, and electrochromic properties of WO3 and NiO thin films were investigated. WO3 and NiO films showed the best electrochromic properties under the flow of Ar:O2 =80:20 and Ar:O2 =90:10, respectively. The EC film fabricated with an optimized WO3 and NiO films showed a high coloration efficiency, a fast response time, and a stable optical modulation. It is expected that flexible EC window films will pave the way for the next-generation energy-saving windows.
개인회원가입으로 더욱 편리하게 이용하세요.
아이디/비밀번호를 잊으셨나요?