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한국전기전자재료학회> 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)> A Review on Thermoelectric Technology: Conductive Polymer Based Thermoelectric Materials

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A Review on Thermoelectric Technology: Conductive Polymer Based Thermoelectric Materials

Dabin Park , Jooheon Kim
  • : 한국전기전자재료학회
  • : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권3호
  • : 연속간행물
  • : 2022년 05월
  • : 203-214(12pages)
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)

DOI


목차

1. INTRODUCTION
2. PEDOT:PSS-BASED THERMOELECTRIC MATERIALS
3. PANI-BASED THERMOELECTRIC MATERIALS
4. CONCLUSION
ACKNOWLEDGEMENT
REFERENCES

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초록 보기

Thermoelectric (TE) heating and cooling devices, which are able to directly convert thermal energy into electrical energy and vice versa, are effective and have exhibited a potential for energy harvesting. With the increasing consumer demands for various wearable electronics, organic-based TE composite materials offer a promise for the TE devices applications. Conductive polymers are widely used as flexible TE materials replacing inorganic materials due to their flexibility, low thermal conductivity, mechanical flexibility, ease of processing, and low cost. In this review, we briefly introduce the latest research trends in the flexible TE technology and provide a comprehensive summary of specific conductive polymer-based TE material fabrication technologies. We also summarize the manufacture for high-efficiency TE composites through the complexation of a conductive polymer matrix/inorganic TE filler. We believe that this review will inspire further research to improve the TE performance of conductive polymers.

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  • : 공학분야  > 전기공학
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  • : 연속간행물
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1Volatile Memristor-Based Artificial Spiking Neurons for Bioinspired Computing

저자 : Soon Joo Yoon , Yoon Kyeung Lee

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 311-321 (11 pages)

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The report reviews recent research efforts in demonstrating a computing system whose operation principle mimics the dynamics of biological neurons. The temporal variation of the membrane potential of neurons is one of the key features that contribute to the information processing in the brain. We first summarize the neuron models that explain the experimentally observed change in the membrane potential. The function of ion channels is briefly introduced to understand such change from the molecular viewpoint. Dedicated circuits that can simulate the neuronal dynamics have been developed to reproduce the charging and discharging dynamics of neurons depending on the input ionic current from presynaptic neurons. Key elements include volatile memristors that can undergo volatile resistance switching depending on the voltage bias. This behavior called the threshold switching has been utilized to reproduce the spikes observed in the biological neurons. Various types of threshold switch have been applied in a different configuration in the hardware demonstration of neurons. Recent studies revealed that the memristor-based circuits could provide energy and space efficient options for the demonstration of neurons using the innate physical properties of materials compared to the options demonstrated with the conventional complementary metal-oxidesemiconductors (CMOS).

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2유전체를 활용한 초고속 에너지 충/방전 소자 기술

저자 : 최현수 ( Hyunsu Choi ) , 류정호 ( Jungho Ryu ) , 윤운하 ( Woon-ha Yoon ) , 황건태 ( Geon-tae Hwang )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 322-332 (11 pages)

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Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

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3자기전기복합체의 비공진 및 공진 상태에서의 자기전기 결합 특성 평가 방법

저자 : Deepak Rajaram Patil , 류정호 ( Jungho Ryu )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 333-341 (9 pages)

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자기전기복합체(magnetoelectric, ME compositie)는 자왜재료와 압전재료의 결합현상을 이용하는 재료로서 지난 20여 년간 이론적, 실험적으로 많은 연구가 진행되어 왔다. 자기전기복합체의 출력특성은 구성하는 소재, 계면층, 복합체의 형상, 자기장하 진동모드 등의 많은 구성요소의 최적화를 통하여 급속히 향상되고 있다. 하지만 자기전기복합체의 자기전기 결합 특성 평가는 대부분의 연구들에서 구체적인 방법을 제시하지 않아 어떻게 측정한 것인지가 불명확한 경우가 많다. 본 논문에서는 자기전기복합체의 비공진, 공진상황에서 자기전기 전압계수를 어떻게 측정할 수 있는지에 대한 자세한 방법을 소개한다. 평가를 위한 샘플로서 대칭적인 구조를 가지는 Gelfenol/PMN-PZT/Gelfenol 자기전기복합체를 제조하였다. 압전 재료로는 이방성의 (011) 32 모드의 PMN-PZT 압전 단결정과 자왜재료로는 Galfenol 합금을 사용하여 에폭시로 접착하였다. 컴퓨터 인터페이스로 자동화된 자기전기 전압특성 측정 시스템의 구성을 우선 설명하고, 자기전기 결합특성의 측정 방법을 단계별로 설명한다. 본 튜토리얼 논문에서는 자기전기결합 특성과 특성평가방법을 이해하고자 하는 연구자들에게 도움이 될 수 있는 평가방법의 원리와 절차를 제공하고자 하였다.


Magnetoelectric (ME) composites are comprised of magnetostrictive and piezoelectric phases. Lots of theoretical and experimental works have been done on ME composites in the last couple of decades. The output performance of ME composites has been enhanced by optimizing the constituent phases, interface layer, dimensions of the ME composites, different operating modes, etc. However, the detailed information about the characterization of ME coupling in ME composites is not provided yet. Therefore, in this tutorial paper, we are giving an insight into the details of measurements of ME voltage coefficient of ME composites both at off-resonance and resonance conditions. A symmetric type Gelfenol/PMN-PZT/Gelfenol ME composites were fabricated by sandwiching (011) 32-mode PMN-PZT single crystal between two Galfenol plates by epoxy bonding are used for the example of ME coupling measurement. The details about the experimental setup used for the measurement of ME voltage coefficient are provided. Furthermore, a step-by-step measurement of ME voltage coefficient using computerized program is demonstrated. We believe the present experimental measurement details can help readers to understand the concept of ME coupling and its analysis.

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4마이크로미터 단위 화학 반응 관찰 및 분석을 위한 미세 유량 제어 장치의 순환구조 제작 연구

저자 : 장원준 ( Wonjun Jang ) , 이남종 ( Namjong Lee ) , 정다운 ( Dawoon Jung ) , 김홍석 ( Hong-seok Kim ) , 정승찬 ( Seung Chan Jung ) , 한재희 ( Jae-hee Han )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 342-347 (6 pages)

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In-situ analyzation and detection of real-time chemical reactions can be a significant part in interpreting the underlying mechanism in very reactive chemical reactions. To do this, first we have designed a microfluidic device (MFD) pattern for observation of synthesis of hierarchical nanostructures based on graphene oxide (GO), conjugating the well-known coupling reaction by which the solution of 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide (EDC)-mediated coupling is enhanced in the presence of n-hydroxysuccinimide (NHS) to make amide bonding, hereafter called as the EDC coupling. Then, we have manufactured microfluidic devices with multiple tens of micrometer-sized channels that can circulate those nanomaterials to be chemically reacted in the channels. These microfluidic devices were made by negative photo lithography and soft lithography. We showed the possibility of using Raman spectroscopy to reveal the basic mechanism of the energy storage applications.

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5Resistive Switching Effects of Zinc Silicate for Nonvolatile Memory Applications

저자 : Minho Im , Jisoo Kim , Kyoungwan Park , Junghyun Sok

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 348-352 (5 pages)

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Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO2 targets) have been investigated. We fabricated an Ag/ZnSiOx/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn2SiO4 was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

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6가스절연개폐장치의 스페이서 내장형 전자식 변압기의 설계 및 제작

저자 : 임승현 ( Seung-hyun Lim ) , 김남훈 ( Nam-Hoon Kim ) , 김동언 ( Dong-eon Kim ) , 김선규 ( Seon-gyu Kim ) , 길경석 ( Gyung-suk Kil )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 353-358 (6 pages)

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Bulky iron-core potential transformers (PT) are installed in a tank of gas insulated switchgears (GIS) for a system voltage measurement in power substations. In this paper, we studied an electronic voltage transformer (EVT) embedded in a spacer for miniaturization, eco-friendliness, and performance improvement of GIS. The prototype EVT consists of a capacitive probe (CP) that can be embedded in a spacer and a voltage Follower with a high input and a low output impedance. The CP was fabricated in the form of a Flexible-PCB to acquire the insulation performance and to withstand vibration and shock during operation. Voltage ratio of the prototype EVT is about 42,270, and the frequency bandwidth of -3 dB ranges from 0.33 Hz to 3.9 MHz. The voltage ratio error evaluated at about 6%, 12% and 18% of the rated voltage of 170 kV was 0.32%, and the phase error was 12.9 minutes. These results were within the accuracy for the class 0.5 specified in IEC 60044-7 and satisfy even in ranges from 80% to 120% of the rated voltage. If the prototype EVT replaces the conventional iron-core potential transformer, it is expected that the height of the GIS could be reduced by 11% and the amount of SF6 will be reduced by at least 10%.

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7트립티센 기반의 트리페닐아민 전자-주게 분자 합성 및 특성 분석

저자 : 류영준 ( Youngjun Ryu ) , 안병관 ( Byeong-kwan An )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 359-365 (7 pages)

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The development of efficient electron donor (or hole-transporting) molecules that can be used in various optoelectronic device fields is highly demanded. In this work, a novel class of triptycene-based three-dimensional (3D) triphenylamine (TI-TPA) derivatives with different end substituents was designed and prepared for transparent electron donor materials. Owing to the rigid 3D triptycene framework, the obtained TI-TPA derivatives had an amorphous morphology with high thermal decomposition temperature. The oxidation potential of these TI-TPA derivatives decreased as the electron donating strength of the end substituent increased. Among TI-TPA derivatives, TI-TPA-OMe exhibited the highest HOMO level (-5.31 eV) which is similar to that of Spiro-OMeTAD (-5.22 eV). In addition, TI-TPA-OMe was found to form a strong charge transfer complex with the triptycene-based acceptor TI-BQ, leading to a new absorption band at around 640 nm. These results can be applied for developing efficient electron donor materials that can mimic the advantages of the spiro-linked structure and TPA units of Spiro-OMeTAD.

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8유기태양전지용 안트라퀴논 기반 전자 받게 분자의 특성 분석

저자 : 현창석 ( Chang-seok Hyun ) , 안병관 ( Byeong-kwan An )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 366-371 (6 pages)

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Recently many efforts have been made to develop a novel class of non-fullerene electron acceptor materials for highperformance organic solar cells. In this work, anthraquinone derivatives, TMAQ and THAQ, were prepared and their availability as electron acceptor materials for organic solar cells were investigated in terms of optical, thermal, electrochemical properties, and solar cell devices. Compared to TMAQ, a significant bathochromic shift of absorption band was observed for THAQ owing to intramolecular hydrogen-bond-assisted CT interactions. Thanks to the fused aromatic ring structure and benzoquinone unit, both TMAQ and THAQ exhibited a high thermal stability and an efficient electron reduction process. In particular, the intramolecular O-H---O=C hydrogen bond of THAQ plays an important role in improving the thermal stability and electron reduction properties. In the P3HT:acceptor solar cell system, THAQ-based devices had more than ca. 6 times higher power conversion efficiency than TMAQ -based devices. These results serve as a guide for developing high-efficient anthraquinonebased electron acceptor materials.

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9유한요소법에 의한 ZnO 바리스터 동작 시 발생되는 열폭주 현상 해석

저자 : 장경욱 ( Kyung-uk Jang )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 372-376 (5 pages)

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Since the ZnO varistor is a semiconductor device, the internal thermal distribution during the varistor operation is recognized as an important factor in the performance and deterioration of the varistor. For an optimal varistor structure design, the thermal runaway phenomenon during the varistor operation was interpreted using the Comsol 5.2 analysis program by a finite element analysis. The maximum temperature of the center measured in the cross section of the ZnO varistor was confirmed to increase as the temperature moved from the lower electrode to the center towards the upper electrode up to 572.6 K. The electrodes are thinned so that the influence of the Schottky barrier is not great. The heat gradient balance is determined to be improved when the electrode of the hybrid form is introduced. The thickness, density, pore distribution, impurity uniformity, and particle size of the ZnO varistor are required, and it is determined that the pyrolysis gradient will be improved regardless of the electrode thickness. When these results are applied to design the ZnO varistor, the optimal structure of the ZnO varistor can be obtained.

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10다공성 철 분말을 이용한 열전지용 열원 적합성 연구

저자 : 김지연 ( Ji Youn Kim ) , 윤현기 ( Hyun Ki Yoon ) , 임채남 ( Chae Nam Im ) , 조장현 ( Jang-hyeon Cho )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 4호 발행 연도 : 2022 페이지 : pp. 377-385 (9 pages)

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Thermal batteries are specialized as primary reserve batteries that operate when the internal heat source is ignited and the produced heat (450~550oC) melts the initially insulating salt into highly conductive eutectic electrolyte. The heat source is composed of Fe powder and KClO4 with different mass ratios and is inserted in-between the cells (stacks) to allow homogeneous heat transfer and ensure complete melting of the electrolyte. An ideal heat source has following criteria to satisfy: sufficient mechanical durability for stacking, appropriate heat calories, ease of combustion by an igniter, stable combustion rate, and modest peak temperature. To satisfy the aforementioned requirements, Fe powder must have high surface area and porosity to increase the reaction rate. Herein, the hydrothermal and spray drying synthesis techniques for Fe powder samples are employed to investigate the physicochemical properties of Fe powder samples and their applicability as a heat source constituent. The direct comparison with the state-of-the-art Fe powder is made to confirm the validity of synthesized products. Finally, the actual batteries were made with the synthesized iron powder samples to examine their performances during the battery operation.

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1A Review on Thermoelectric Technology: Conductive Polymer Based Thermoelectric Materials

저자 : Dabin Park , Jooheon Kim

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 203-214 (12 pages)

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Thermoelectric (TE) heating and cooling devices, which are able to directly convert thermal energy into electrical energy and vice versa, are effective and have exhibited a potential for energy harvesting. With the increasing consumer demands for various wearable electronics, organic-based TE composite materials offer a promise for the TE devices applications. Conductive polymers are widely used as flexible TE materials replacing inorganic materials due to their flexibility, low thermal conductivity, mechanical flexibility, ease of processing, and low cost. In this review, we briefly introduce the latest research trends in the flexible TE technology and provide a comprehensive summary of specific conductive polymer-based TE material fabrication technologies. We also summarize the manufacture for high-efficiency TE composites through the complexation of a conductive polymer matrix/inorganic TE filler. We believe that this review will inspire further research to improve the TE performance of conductive polymers.

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2광 시냅스 및 뉴로모픽 소자 기술

저자 : 송승호 ( Seungho Song ) , 김지훈 ( Jeehoon Kim ) , 김영훈 ( Yong-hoon Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 215-222 (8 pages)

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Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

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3X선 기반 분광광도계를 통해 얻은 데이터 분석의 기초

저자 : 조재현 ( Jae-hyeon Cho ) , 조욱 ( Wook Jo )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 223-231 (9 pages)

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분광학은 재료의 결정학적, 화학적 구조를 분석하기 위해 가장 보편적으로 활용되는 분석 기법이다. 이러한 기조에 따라 다양한 분석 소프트웨어와 peak fitting과 관련된 기술적 가이드라인이 보급되었지만, 정작 '왜' 중간 계산 과정을 거치고 해당 함수를 쓰는지에 대한 논의는 부족한 실정이다. 따라서 본 tutorial에서는 X선 기반 분광광도계를 통해 얻은 데이터 분석의 기초를 논하고자 한다. 이를 위해 관련된 peak fitting을 위해 필요한 실용적 배경지식을 제시하였다. 나아가, 하나의 예시로 임의로 선정한 X선 광전자 분광법 데이터에 대한 curve fitting 과정을 순서에 따라 알기 쉽게 소개하였다. 제시한 기초 이론은 특정 소프트웨어에 국한된 내용이 아니라 fitting tool이 있는 모든 소프트웨어에서 그대로 활용 가능할뿐더러 다른 분광법 데이터를 분석하는 데 적용 가능하기 때문에, 본 내용을 숙지한다면 보다 수월한 연구 진행을 위한 바탕이 될 수 있을 것이라 기대한다.

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4최대 전압 12 kV, 커패시턴스 50~500 pF 가변 진공커패시터 개발

저자 : 차영광 ( Youngkwang Cha ) , 이일회 ( Ilhoi Lee ) , 전기범 ( Kibeom Jeon ) , 장지훈 ( Jihoon Jang ) , 주흥진 ( Heungjin Ju ) , 최승길 ( Seungkil Choi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 232-240 (9 pages)

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A variable vacuum capacitor (VVC), which is a variable element, is used to match impedance in plasma that changes with various impedance values, and its use is expanding with the rapid growth of the semiconductor business. Since VVCs have to secure insulation performance and vary capacitance within a compact size, electrode design and manufacturing are very important; thus, various technologies such as part design and manufacturing technology and vacuum brazing technology are required. In this study, based on the model of an advanced foreign company that is widely used for impedance matching in the manufacture of semiconductors and displays, a VVC that can realize the same performance was developed. The electrode part was designed, the consistency was confirmed through analysis, and the precision of capacitance was improved by designing a cup-type electrode to secure the concentricity of the electrode. As a result of the evaluation, all requirements was satisfied. We believe that self-development will be possible if satisfactory responses are received through evaluation by VVC consumers in the future.

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54H-SiC 기반으로 제작된 MPS Diode의 Schottky 영역 비율에 따른 전기적 특성 분석

저자 : 이형진 ( Hyung-jin Lee ) , 강예환 ( Ye-hwan Kang ) , 정승우 ( Seung-woo Jung ) , 이건희 ( Geon-hee Lee ) , 변동욱 ( Dong-wook Byun ) , 신명철 ( Myeong-choel Shin ) , 양창헌 ( Chang-heon Yang ) , 구상모 ( Sang-mo Koo )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 241-245 (5 pages)

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In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

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63D NAND 플래시메모리 String에 전열어닐링 적용을 가정한 기계적 안정성 분석 및 개선에 관한 연구

저자 : 김유진 ( Yu-jin Kim ) , 박준영 ( Jun-young Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 246-254 (9 pages)

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Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

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The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (Vfbf) and bottom gate (Vfbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson's equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as Vfbb-Vfbf increases when the projected range is near the top gate, and the SS decreases as Vfbb-Vfbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.

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8고압 중수소 열처리에 의한 MOSFETs의 특성 개선에 대한 연구

저자 : 정대한 ( Dae-han Jung ) , 구자윤 ( Ja-yun Ku ) , 왕동현 ( Dong-hyun Wang ) , 손영서 ( Young-seo Son ) , 박준영 ( Jun-young Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 264-268 (5 pages)

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High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), off-state current (IOFF), and gate leakage (IG) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO2 interfaces as well as eliminate the bulk trap in SiO2. It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.

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9탄소나노튜브 소재의 정밀 수동소자 적용을 위한 한계 정격전력 용량에 관한 연구

저자 : 이선우 ( Sunwoo Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 269-274 (6 pages)

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We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

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10WO3/NiO 상호 보완적인 구조의 전고체 전기변색 필름

저자 : 신민경 ( Minkyung Shin ) , 이선희 ( Sun Hee Lee ) , 서인태 ( Intae Seo ) , 강형원 ( Hyung-won Kang ) , 한승호 ( Seung Ho Han )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 275-280 (6 pages)

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An all-solid-state electrochromic film was fabricated by laminating tungsten oxide (WO3) and nickel oxide (NiO) thin films deposited by a reactive DC magnetron sputtering on flexible ITO films. The influence of oxygen partial pressure on the crystal structure, microstructure, optical properties, and electrochromic properties of WO3 and NiO thin films were investigated. WO3 and NiO films showed the best electrochromic properties under the flow of Ar:O2=80:20 and Ar:O2=90:10, respectively. The EC film fabricated with an optimized WO3 and NiO films showed a high coloration efficiency, a fast response time, and a stable optical modulation. It is expected that flexible EC window films will pave the way for the next-generation energy-saving windows.

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