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한국전기전자재료학회> 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)> 이젯 프린터를 사용한 고분자/퀀텀닷 마이크로 패터닝 공정

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이젯 프린터를 사용한 고분자/퀀텀닷 마이크로 패터닝 공정

Micropattern Arrays of Polymers/Quantum Dots Formed by Electrohydrodynamic Jet (e-jet) Printing

김시몬 ( Simon Kim ) , 이수언 ( Su Eon Lee ) , 김봉훈 ( Bong Hoon Kim )
  • : 한국전기전자재료학회
  • : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권1호
  • : 연속간행물
  • : 2022년 01월
  • : 18-23(6pages)
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)

DOI


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이젯 프린팅은 직접적인 비접촉 마이크로 팹기술의 하나로서 노즐과 기판 사이에 강한 전기장을 가함으로써 넓은 범위의 마이크로/나노패턴 어레이를 구현할 수 있는 다목적 팹공정이다. 제조된 고분자/퀀텀닷 마이이크로 패턴의 모양과 두께는 자동화된 프린트 기계에 설치된 노즐 직경과 공정에 사용된 잉크 성분에 일반적으로 정밀한 의존성을 갖는다. 본 논문의 목적은 실험 결과에 영향을 미칠 수 있는 각각의 공정 변수 효과를 설명하기 위해서 이젯 프린팅된 고분자/퀀텀닷의 전형적인 실제 예를 설명하는데 있다. 여기서 우리는 마이크로/나노 해상도로 두께가 정밀하게 제어된 고분자/퀀텀닷 패턴을 제조할 수 있는 몇 가지 이젯 프린팅 공정을 구현하였다.
Electrohydrodynamic jet (e-jet) printing, a type of direct contactless microfabrication technology, is a versatile fabrication process that enables a wide range of micro/nanopattern arrays by applying a strong electric field between the nozzle and the substrate. In general, the morphology and the thickness of polymers/quantum dot micropatterns show a systematic dependence on the diameter of the nozzle and the ink composition with a fully automated printing machine. The purpose of this report is to provide typical examples of e-jet printed micropatterns of polymers/quantum dots to explain the effect of each process variable on the result of experiments. Here, we demonstrate several operating conditions that allow high-resolution printing of layers of polymers/quantum dots with a precise control over thickness and submicron lateral resolution.

UCI(KEPA)

I410-ECN-0102-2022-500-000950233

간행물정보

  • : 공학분야  > 전기공학
  • : KCI등재
  • :
  • : 격월
  • : 1226-7945
  • : 2288-3258
  • : 학술지
  • : 연속간행물
  • : 1988-2022
  • : 4616


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3이젯 프린터를 사용한 고분자/퀀텀닷 마이크로 패터닝 공정

저자 : 김시몬 ( Simon Kim ) , 이수언 ( Su Eon Lee ) , 김봉훈 ( Bong Hoon Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 18-23 (6 pages)

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이젯 프린팅은 직접적인 비접촉 마이크로 팹기술의 하나로서 노즐과 기판 사이에 강한 전기장을 가함으로써 넓은 범위의 마이크로/나노패턴 어레이를 구현할 수 있는 다목적 팹공정이다. 제조된 고분자/퀀텀닷 마이이크로 패턴의 모양과 두께는 자동화된 프린트 기계에 설치된 노즐 직경과 공정에 사용된 잉크 성분에 일반적으로 정밀한 의존성을 갖는다. 본 논문의 목적은 실험 결과에 영향을 미칠 수 있는 각각의 공정 변수 효과를 설명하기 위해서 이젯 프린팅된 고분자/퀀텀닷의 전형적인 실제 예를 설명하는데 있다. 여기서 우리는 마이크로/나노 해상도로 두께가 정밀하게 제어된 고분자/퀀텀닷 패턴을 제조할 수 있는 몇 가지 이젯 프린팅 공정을 구현하였다.

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4Li2CO3와 B2O3를 첨가한 Bi1/2Na1/2TiO3-SrTiO3 무연 압전 세라믹스의 저온 소성 연구

저자 : 이상섭 ( Sang Sub Lee ) , 박영석 ( Young-seok Park ) , 즈엉짱안 ( Trang An Duong ) , 무클리샤아이샤데비타 ( Mukhlishah Aisyah Devita ) , 한형수 ( Hyoung-su Han ) , 이재신 ( Jae-shin Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 24-31 (8 pages)

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This study investigated microstructures, crystal structures, polarization, dielectric and electromechanical properties of 0.76Bi1/2Na1/2TiO3-0.24SrTiO3 (BNT-24ST)-based piezoceramcs by adding Li2CO3 and B2O3 (LB) as sintering aids for low-temperature sintering. All samples were successfully synthesized using conventional solid-state reaction method and sintered at 950, 1,000, 1,050, 1,100 and 1,175℃ for 2 hours. Without LB, specimens required sintering temperatures over 1,175℃ for sufficient densification, while the addition of 0.10-mol LB decreased the sintering temperatures down to 950℃. The average grain size and dielectric properties of BNT-24ST-10LB ceramics were enhanced with increasing sintering temperature. We found that the low-temperature sintered BNT-24ST piezoceramics by adding LB showed the d33*value of 402 pm/V at 4 kV/mm after sintering at 1,050℃, which was better than that of high-temperature fired specimens sintered at 1,175℃ without LB (242 pm/V). We believe that the results of this study promise a candidate for low-cost multilayer ceramic actuator applications.

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5RF 마그네트론 스퍼터링 시스템을 이용하여 증착한 AGZO 박막의 Ar 유량에 따른 구조적, 전기적, 광학적 특성

저자 : 장석현 ( Seok-hyeon Jang ) , 김덕규 ( Deok Kyu Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 32-36 (5 pages)

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AGZO thin films were deposited on glass substrates using RF magnetron sputtering system under Ar flow rates, and their structural, electrical, and optical properties were analyzed systematically. As a result of the XRD pattern, the peak of the (002) (2θ≈33.7˚) orientation was observed, and it was found to have a hexagonal wurtzite structure. The sheet resistance of Ar 5 sccm was 3.073×102 Ω/sq and showed the best electrical properties because of the improvement of mobility due to the increase of the grain size and the variation of RMS roughness. In addition, the average transmittance was more than 90% for all samples, which demonstrated good optical properties. It is expected that the TCO characteristics can be improved by controlling Ar flow rates, and this will increase the efficiency of photoelectronic devices such as OLED and solar cells.

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6금속층 두께에 따른 ITO/Ag/ITO 다층 투명 전극의 발열 특성 연구

저자 : 민혜진 ( Hye-jin Min ) , 강예지나 ( Ye-jina Kang ) , 손혜원 ( Hye-won Son ) , 신소현 ( So-hyun Sin ) , 황민호 ( Min-ho Hwang ) , 이현용 ( Hyun-yong Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 37-43 (7 pages)

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In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10-3 Ω-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.

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7다중준위 상변환 메모리를 위한 Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 구조의 전기적 특성 연구

저자 : 오우영 ( Woo-young Oh ) , 이현용 ( Hyun-yong Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 44-49 (6 pages)

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In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge2Sb2Te5/Ti/W-doped Ge8Sb2Te11, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick Ge2Sb2Te5 and W-doped Ge8Sb2Te11 films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge8Sb2Te11 film was about 1 order larger than that of Ge2Sb2Te5 film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge2Sb2Te5 (150 nm)/Ti (20 nm)/WGe8Sb2Te11 (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

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8Nanosheet FETs에서의 효과적인 전열어닐링 수행을 위한 기계적 안정성에 대한 연구

저자 : 왕동현 ( Dong-hyun Wang ) , 박준영 ( Jun-young Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 50-57 (8 pages)

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Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

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9스핀 코팅 공정에 따른 액정디스플레이용 폴리이미드 배향막 특성 분석

저자 : 김진아 ( Jin-ah Kim ) , 최세훈 ( Se-hoon Choi ) , 박홍규 ( Hong-gyu Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 58-65 (8 pages)

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The field of liquid crystal display (LCD) is constantly in the spotlight and the process of depositing an alignment layer in the LCD manufacturing process is very important to obtain excellent performance such as low-power driving and high-speed response to improve LCD performance. Therefore, research on liquid crystal (LC) alignment is being actively conducted. When manufacturing LCD, it is necessary to consider the effect of the alignment layer thickness as one of the factors affecting various LCD performances. In addition, previous studies confirmed the LC alignment characteristics correlate with the rotation speed in the spin coating process. Therefore, the electro-optical properties of the LCD were investigated by manufacturing a polyimide alignment layer by varying the rotation speed in the spin coating process in this study. It was confirmed that the thickness of the polyimide alignment layer was controlled according to the spin coating conditions. The average transmittances of anti-parallel LC cells at the spin coating speed of 2,500 rpm and 3,000 rpm are about 60%, which indicates that the LC cell has relatively higher performance. At the spin coating speed of 3,000 rpm, the voltage-transmittance curve of twisted nematic (TN) LC cell was below 1.5 V, which means that the TN LC cell operated at a low power. In addition, high-speed operating characteristics were confirmed with a response time of less than 30 ms. From these derived data, we confirmed that the ideal spin coating speed is 3,000 rpm. And these results provide an optimized polyimide alignment layer process when considering enhanced future LCD manufacturing.

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10송전선로용 고전압 절연체의 최적 형상에 대한 유한요소 해석

저자 : 김태용 ( Taeyong Kim ) , 산얄심피 ( Simpy Sanyal ) , 라벨로마데우스 ( Matheus Rabelo ) , 이준신 ( Junsin Yi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 66-71 (6 pages)

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The insulator used for the transmission line is a device that is bonded with a cap, pin, ceramic, and cement to withstand insulation capacity and mechanical load. The insulator design can help to reduce the dispersion of the electric field; thus, the optimization of today's design, especially as demanded power grows, is critical. The designs of four manufacturers were used to perform a comparative analysis. Under dry circumstances of the new product, an electric field distribution study was done with no pollutants attached. Manufacturer D's design has the best voltage uniformity of 24.33% and the arc length of 500 mm or more. Manufacturer C's design has an equalizing voltage of more than 2% higher than that of other manufacturers. The importance of the design of the insulator and the number of connections according to the installation conditions is very efficient for transmission lines that will increase in the future.

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