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한국센서학회> 센서학회지> In0.8Ga0.2As HEMT 소자에서 Output-conductance가 차단 주파수에 미치는 영향에 대한 연구

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In0.8Ga0.2As HEMT 소자에서 Output-conductance가 차단 주파수에 미치는 영향에 대한 연구

Effect of Output-conductance on Current-gain Cut-off frequency in In0.8Ga0.2As High-Electron-mobility Transistors

노태범 ( Tae-beom Rho ) , 김대현 ( Dae-hyun Kim )
  • : 한국센서학회
  • : 센서학회지 29권5호
  • : 연속간행물
  • : 2020년 09월
  • : 324-327(4pages)
센서학회지

DOI


목차

1. 서 론
2. 연구 방법
3. 결과 및 고찰
4. 결 론
감사의 글
REFERENCES

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초록 보기

The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In longchannel devices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSM perspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices, goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused a considerable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally, the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down Lg.

UCI(KEPA)

I410-ECN-0102-2021-500-001328626

간행물정보

  • : 공학분야  > 전기공학
  • : KCI등재
  • :
  • : 격월
  • : 1225-5475
  • : 2093-7563
  • : 학술지
  • : 연속간행물
  • : 1992-2021
  • : 1861


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저자 : 노태범 ( Tae-beom Rho ) , 김대현 ( Dae-hyun Kim )

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The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In longchannel devices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSM perspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices, goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused a considerable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally, the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down Lg.

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7졸-겔 공법으로 제작된 SnO2 박막 트랜지스터의 광전기적 특성

저자 : 이창민 ( Changmin Lee ) , 장재원 ( Jaewon Jang )

발행기관 : 한국센서학회 간행물 : 센서학회지 29권 5호 발행 연도 : 2020 페이지 : pp. 328-331 (4 pages)

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In this study, a highly crystalline SnO2 thin film was formed using a sol-gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap(3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W-1, and photosensitivity of 4.67 × 102.

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8InGaZnO 용액의 농도가 Drop-casting으로 제작된 산화물 박막 트랜지스터의 전기적 특성에 미치는 영향

저자 : 노은경 ( Eun-kyung Noh ) , 유경민 ( Kyeong Min Yu ) , 김민회 ( Min-hoi Kim )

발행기관 : 한국센서학회 간행물 : 센서학회지 29권 5호 발행 연도 : 2020 페이지 : pp. 332-335 (4 pages)

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Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.

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9무게측정방식에 따른 Lever-linked Roberval Mechanism의 설계특성

저자 : 안지윤 ( Ji Yun An ) , 안중환 ( Jung Hwan Ahn ) , 이길승 ( Gil Seung Lee ) , 김화영 ( Hwa Young Kim )

발행기관 : 한국센서학회 간행물 : 센서학회지 29권 5호 발행 연도 : 2020 페이지 : pp. 336-341 (6 pages)

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The deflection and null balance methods are used for precision force measurement in the precision industry. Since both methods are based on deformation, the performance of the load cell mechanism is important. In this study, the design variables were obtained via the free body diagram of a lever-linked Roberval mechanism (combined with a flexible hinge link and a Roberval mechanism), and the design characteristics were analyzed according to the weight method. Based on the design characteristics, the optimal design was conducted according to the weight method and FEM was used to verify its reliability.

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10부영양화 사전 예방을 위한 휴대용 총인 모니터링 시스템 개발

저자 : 정동건 ( Dong Geon Jung ) , 김승덕 ( Seung Deok Kim ) , 권순열 ( Soon Yeol Kwon ) , 이재용 ( Jae Yong Lee ) , 김유성 ( Yu Seong Kim ) , 이준엽 ( Junyeop Lee ) , 김재건 ( Jaekeon Kim ) , 김세완 ( Sae-wan Kim ) , 공성호 ( Seong Ho Kong ) , 정대웅 ( Daewoong Jung )

발행기관 : 한국센서학회 간행물 : 센서학회지 29권 5호 발행 연도 : 2020 페이지 : pp. 342-347 (6 pages)

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In this study, a portable total-phosphorus (TP) monitoring system utilizing a photocatalytic-reaction-based pretreatment method is proposed, fabricated, and characterized. Commercial TP monitoring systems are only used in laboratories because of their complex monitoring procedure, bulk-size, and high-cost. In particular, pretreatment in commercial TP monitoring systems is performed at high temperatures (> 120 ℃) and pressure (> 1.1 kg cm-2) making it difficult to minimize the scale of the systems. The proposed TP monitoring system employs a pretreatment method with a photocatalytic reaction; thus, its size can be reduced, as photocatalytic reactions occur at room temperature and atmospheric pressure. Analytes with various TP concentrations are pretreated using the proposed portable TP monitoring system and are quantitatively measured with an LED and a photodiode.

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