간행물

한국전기전자재료학회> 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.)

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) update

Journal of the Korean Institute of Electrical and Electronic Material Engineers

  • : 한국전기전자재료학회
  • : 공학분야  >  전기공학
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  • : 1226-7945
  • : 2288-3258
  • : 전기전자재료학회지(~1997)→전기전자재료학회논문지

수록정보
35권1호(2022) |수록논문 수 : 15
간행물 제목
35권3호(2022년 05월) 수록논문
최근 권호 논문
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1A Review on Thermoelectric Technology: Conductive Polymer Based Thermoelectric Materials

저자 : Dabin Park , Jooheon Kim

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 203-214 (12 pages)

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Thermoelectric (TE) heating and cooling devices, which are able to directly convert thermal energy into electrical energy and vice versa, are effective and have exhibited a potential for energy harvesting. With the increasing consumer demands for various wearable electronics, organic-based TE composite materials offer a promise for the TE devices applications. Conductive polymers are widely used as flexible TE materials replacing inorganic materials due to their flexibility, low thermal conductivity, mechanical flexibility, ease of processing, and low cost. In this review, we briefly introduce the latest research trends in the flexible TE technology and provide a comprehensive summary of specific conductive polymer-based TE material fabrication technologies. We also summarize the manufacture for high-efficiency TE composites through the complexation of a conductive polymer matrix/inorganic TE filler. We believe that this review will inspire further research to improve the TE performance of conductive polymers.

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2광 시냅스 및 뉴로모픽 소자 기술

저자 : 송승호 ( Seungho Song ) , 김지훈 ( Jeehoon Kim ) , 김영훈 ( Yong-hoon Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 215-222 (8 pages)

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Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

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3X선 기반 분광광도계를 통해 얻은 데이터 분석의 기초

저자 : 조재현 ( Jae-hyeon Cho ) , 조욱 ( Wook Jo )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 223-231 (9 pages)

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분광학은 재료의 결정학적, 화학적 구조를 분석하기 위해 가장 보편적으로 활용되는 분석 기법이다. 이러한 기조에 따라 다양한 분석 소프트웨어와 peak fitting과 관련된 기술적 가이드라인이 보급되었지만, 정작 '왜' 중간 계산 과정을 거치고 해당 함수를 쓰는지에 대한 논의는 부족한 실정이다. 따라서 본 tutorial에서는 X선 기반 분광광도계를 통해 얻은 데이터 분석의 기초를 논하고자 한다. 이를 위해 관련된 peak fitting을 위해 필요한 실용적 배경지식을 제시하였다. 나아가, 하나의 예시로 임의로 선정한 X선 광전자 분광법 데이터에 대한 curve fitting 과정을 순서에 따라 알기 쉽게 소개하였다. 제시한 기초 이론은 특정 소프트웨어에 국한된 내용이 아니라 fitting tool이 있는 모든 소프트웨어에서 그대로 활용 가능할뿐더러 다른 분광법 데이터를 분석하는 데 적용 가능하기 때문에, 본 내용을 숙지한다면 보다 수월한 연구 진행을 위한 바탕이 될 수 있을 것이라 기대한다.


Spectroscopies are the most widely used for understanding the crystallographic, chemical, and physical aspects of materials; therefore, numerous commercial and non-commercial software have been introduced to help researchers better handling their spectroscopic data. However, not many researchers, especially early-stage ones, have a proper background knowledge on the choice of fitting functions and a technique for actual fitting, although the essence of such data analysis is peak fitting. In this regard, we present a practical guide for peak fitting for data analysis. We start with a basic-level theoretical background why and how a certain protocol for peak fitting works, followed by a step-by-step visualized demonstration how an actual fitting is performed. We expect that this contribution is sure to help many active researchers in the discipline of materials science better handle their spectroscopic data.

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4최대 전압 12 kV, 커패시턴스 50~500 pF 가변 진공커패시터 개발

저자 : 차영광 ( Youngkwang Cha ) , 이일회 ( Ilhoi Lee ) , 전기범 ( Kibeom Jeon ) , 장지훈 ( Jihoon Jang ) , 주흥진 ( Heungjin Ju ) , 최승길 ( Seungkil Choi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 232-240 (9 pages)

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A variable vacuum capacitor (VVC), which is a variable element, is used to match impedance in plasma that changes with various impedance values, and its use is expanding with the rapid growth of the semiconductor business. Since VVCs have to secure insulation performance and vary capacitance within a compact size, electrode design and manufacturing are very important; thus, various technologies such as part design and manufacturing technology and vacuum brazing technology are required. In this study, based on the model of an advanced foreign company that is widely used for impedance matching in the manufacture of semiconductors and displays, a VVC that can realize the same performance was developed. The electrode part was designed, the consistency was confirmed through analysis, and the precision of capacitance was improved by designing a cup-type electrode to secure the concentricity of the electrode. As a result of the evaluation, all requirements was satisfied. We believe that self-development will be possible if satisfactory responses are received through evaluation by VVC consumers in the future.

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54H-SiC 기반으로 제작된 MPS Diode의 Schottky 영역 비율에 따른 전기적 특성 분석

저자 : 이형진 ( Hyung-jin Lee ) , 강예환 ( Ye-hwan Kang ) , 정승우 ( Seung-woo Jung ) , 이건희 ( Geon-hee Lee ) , 변동욱 ( Dong-wook Byun ) , 신명철 ( Myeong-choel Shin ) , 양창헌 ( Chang-heon Yang ) , 구상모 ( Sang-mo Koo )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 241-245 (5 pages)

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In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.

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63D NAND 플래시메모리 String에 전열어닐링 적용을 가정한 기계적 안정성 분석 및 개선에 관한 연구

저자 : 김유진 ( Yu-jin Kim ) , 박준영 ( Jun-young Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 246-254 (9 pages)

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Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

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7가우스 함수의 파라미터에 따른 비대칭형 무접합 이중 게이트 MOSFET의 문턱전압 이하 스윙 분석

저자 : 정학기 ( Hakkee Jung )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 255-263 (9 pages)

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The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (Vfbf) and bottom gate (Vfbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson's equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as Vfbb-Vfbf increases when the projected range is near the top gate, and the SS decreases as Vfbb-Vfbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.

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8고압 중수소 열처리에 의한 MOSFETs의 특성 개선에 대한 연구

저자 : 정대한 ( Dae-han Jung ) , 구자윤 ( Ja-yun Ku ) , 왕동현 ( Dong-hyun Wang ) , 손영서 ( Young-seo Son ) , 박준영 ( Jun-young Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 264-268 (5 pages)

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High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), off-state current (IOFF), and gate leakage (IG) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO2 interfaces as well as eliminate the bulk trap in SiO2. It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.

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9탄소나노튜브 소재의 정밀 수동소자 적용을 위한 한계 정격전력 용량에 관한 연구

저자 : 이선우 ( Sunwoo Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 269-274 (6 pages)

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We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

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10WO3/NiO 상호 보완적인 구조의 전고체 전기변색 필름

저자 : 신민경 ( Minkyung Shin ) , 이선희 ( Sun Hee Lee ) , 서인태 ( Intae Seo ) , 강형원 ( Hyung-won Kang ) , 한승호 ( Seung Ho Han )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 3호 발행 연도 : 2022 페이지 : pp. 275-280 (6 pages)

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An all-solid-state electrochromic film was fabricated by laminating tungsten oxide (WO3) and nickel oxide (NiO) thin films deposited by a reactive DC magnetron sputtering on flexible ITO films. The influence of oxygen partial pressure on the crystal structure, microstructure, optical properties, and electrochromic properties of WO3 and NiO thin films were investigated. WO3 and NiO films showed the best electrochromic properties under the flow of Ar:O2=80:20 and Ar:O2=90:10, respectively. The EC film fabricated with an optimized WO3 and NiO films showed a high coloration efficiency, a fast response time, and a stable optical modulation. It is expected that flexible EC window films will pave the way for the next-generation energy-saving windows.

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1이차원 유전체 나노시트의 개발 동향

저자 : 임해나 ( Haena Yim ) , 최지원 ( Ji-won Choi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 1-10 (10 pages)

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Two-dimensional materials have shown a great promise for the next-generation electronic materials due to their unique optical, physical, and chemical properties that are distinct from their bulk counterparts. Their atomic-level thickness, the feature for flexible tenability, and exposed huge surface allow various approaches for high-performance nanoscale devices. Especially, this review highlights the recent progress on two-dimensional dielectric nanosheets, which are obtained by cheap and mass-producible solution-based exfoliation process, accompanied by the preparation methods, various deposition methods, and the characteristics of devices using a dielectric nanosheet thin films. We also present a perspective on the advantages offered by this two-dimensional dielectric nanosheets for the upcoming future nanoelectonics.

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2저항변화식 가스센서 선택성 향상을 위한 멤브레인 및 촉매 연구동향

저자 : 장지수 ( Ji-soo Jang )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 11-17 (7 pages)

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Direct exposure to toxic and hazardous gases has always been considered as the most pervasive problem worldwide, leading to a gradual increase in the number of asthma patients due to NOx/SOx gases inhaling and exposure to 50 ppm formaldehyde gases. Therefore, the development of accurate gas sensors is a key issue for resolving these problems. To address such issues, the development of membranes for selective filtering of target molecules as well as nanocatalyst for enhancing the sensing selectivity is highly crucial. In this review, the research progress for porous membrane materials (e.g. MOFs, and graphene) and nanocatalyst technology for the development of selective and accurate gas sensors will be discussed.

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3이젯 프린터를 사용한 고분자/퀀텀닷 마이크로 패터닝 공정

저자 : 김시몬 ( Simon Kim ) , 이수언 ( Su Eon Lee ) , 김봉훈 ( Bong Hoon Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 18-23 (6 pages)

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이젯 프린팅은 직접적인 비접촉 마이크로 팹기술의 하나로서 노즐과 기판 사이에 강한 전기장을 가함으로써 넓은 범위의 마이크로/나노패턴 어레이를 구현할 수 있는 다목적 팹공정이다. 제조된 고분자/퀀텀닷 마이이크로 패턴의 모양과 두께는 자동화된 프린트 기계에 설치된 노즐 직경과 공정에 사용된 잉크 성분에 일반적으로 정밀한 의존성을 갖는다. 본 논문의 목적은 실험 결과에 영향을 미칠 수 있는 각각의 공정 변수 효과를 설명하기 위해서 이젯 프린팅된 고분자/퀀텀닷의 전형적인 실제 예를 설명하는데 있다. 여기서 우리는 마이크로/나노 해상도로 두께가 정밀하게 제어된 고분자/퀀텀닷 패턴을 제조할 수 있는 몇 가지 이젯 프린팅 공정을 구현하였다.

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4Li2CO3와 B2O3를 첨가한 Bi1/2Na1/2TiO3-SrTiO3 무연 압전 세라믹스의 저온 소성 연구

저자 : 이상섭 ( Sang Sub Lee ) , 박영석 ( Young-seok Park ) , 즈엉짱안 ( Trang An Duong ) , 무클리샤아이샤데비타 ( Mukhlishah Aisyah Devita ) , 한형수 ( Hyoung-su Han ) , 이재신 ( Jae-shin Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 24-31 (8 pages)

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This study investigated microstructures, crystal structures, polarization, dielectric and electromechanical properties of 0.76Bi1/2Na1/2TiO3-0.24SrTiO3 (BNT-24ST)-based piezoceramcs by adding Li2CO3 and B2O3 (LB) as sintering aids for low-temperature sintering. All samples were successfully synthesized using conventional solid-state reaction method and sintered at 950, 1,000, 1,050, 1,100 and 1,175℃ for 2 hours. Without LB, specimens required sintering temperatures over 1,175℃ for sufficient densification, while the addition of 0.10-mol LB decreased the sintering temperatures down to 950℃. The average grain size and dielectric properties of BNT-24ST-10LB ceramics were enhanced with increasing sintering temperature. We found that the low-temperature sintered BNT-24ST piezoceramics by adding LB showed the d33*value of 402 pm/V at 4 kV/mm after sintering at 1,050℃, which was better than that of high-temperature fired specimens sintered at 1,175℃ without LB (242 pm/V). We believe that the results of this study promise a candidate for low-cost multilayer ceramic actuator applications.

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5RF 마그네트론 스퍼터링 시스템을 이용하여 증착한 AGZO 박막의 Ar 유량에 따른 구조적, 전기적, 광학적 특성

저자 : 장석현 ( Seok-hyeon Jang ) , 김덕규 ( Deok Kyu Kim )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 32-36 (5 pages)

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AGZO thin films were deposited on glass substrates using RF magnetron sputtering system under Ar flow rates, and their structural, electrical, and optical properties were analyzed systematically. As a result of the XRD pattern, the peak of the (002) (2θ≈33.7˚) orientation was observed, and it was found to have a hexagonal wurtzite structure. The sheet resistance of Ar 5 sccm was 3.073×102 Ω/sq and showed the best electrical properties because of the improvement of mobility due to the increase of the grain size and the variation of RMS roughness. In addition, the average transmittance was more than 90% for all samples, which demonstrated good optical properties. It is expected that the TCO characteristics can be improved by controlling Ar flow rates, and this will increase the efficiency of photoelectronic devices such as OLED and solar cells.

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6금속층 두께에 따른 ITO/Ag/ITO 다층 투명 전극의 발열 특성 연구

저자 : 민혜진 ( Hye-jin Min ) , 강예지나 ( Ye-jina Kang ) , 손혜원 ( Hye-won Son ) , 신소현 ( So-hyun Sin ) , 황민호 ( Min-ho Hwang ) , 이현용 ( Hyun-yong Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 37-43 (7 pages)

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In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10-3 Ω-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.

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7다중준위 상변환 메모리를 위한 Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 구조의 전기적 특성 연구

저자 : 오우영 ( Woo-young Oh ) , 이현용 ( Hyun-yong Lee )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 44-49 (6 pages)

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In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge2Sb2Te5/Ti/W-doped Ge8Sb2Te11, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick Ge2Sb2Te5 and W-doped Ge8Sb2Te11 films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge8Sb2Te11 film was about 1 order larger than that of Ge2Sb2Te5 film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge2Sb2Te5 (150 nm)/Ti (20 nm)/WGe8Sb2Te11 (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

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8Nanosheet FETs에서의 효과적인 전열어닐링 수행을 위한 기계적 안정성에 대한 연구

저자 : 왕동현 ( Dong-hyun Wang ) , 박준영 ( Jun-young Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 50-57 (8 pages)

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Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

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9스핀 코팅 공정에 따른 액정디스플레이용 폴리이미드 배향막 특성 분석

저자 : 김진아 ( Jin-ah Kim ) , 최세훈 ( Se-hoon Choi ) , 박홍규 ( Hong-gyu Park )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 58-65 (8 pages)

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The field of liquid crystal display (LCD) is constantly in the spotlight and the process of depositing an alignment layer in the LCD manufacturing process is very important to obtain excellent performance such as low-power driving and high-speed response to improve LCD performance. Therefore, research on liquid crystal (LC) alignment is being actively conducted. When manufacturing LCD, it is necessary to consider the effect of the alignment layer thickness as one of the factors affecting various LCD performances. In addition, previous studies confirmed the LC alignment characteristics correlate with the rotation speed in the spin coating process. Therefore, the electro-optical properties of the LCD were investigated by manufacturing a polyimide alignment layer by varying the rotation speed in the spin coating process in this study. It was confirmed that the thickness of the polyimide alignment layer was controlled according to the spin coating conditions. The average transmittances of anti-parallel LC cells at the spin coating speed of 2,500 rpm and 3,000 rpm are about 60%, which indicates that the LC cell has relatively higher performance. At the spin coating speed of 3,000 rpm, the voltage-transmittance curve of twisted nematic (TN) LC cell was below 1.5 V, which means that the TN LC cell operated at a low power. In addition, high-speed operating characteristics were confirmed with a response time of less than 30 ms. From these derived data, we confirmed that the ideal spin coating speed is 3,000 rpm. And these results provide an optimized polyimide alignment layer process when considering enhanced future LCD manufacturing.

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10송전선로용 고전압 절연체의 최적 형상에 대한 유한요소 해석

저자 : 김태용 ( Taeyong Kim ) , 산얄심피 ( Simpy Sanyal ) , 라벨로마데우스 ( Matheus Rabelo ) , 이준신 ( Junsin Yi )

발행기관 : 한국전기전자재료학회 간행물 : 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 35권 1호 발행 연도 : 2022 페이지 : pp. 66-71 (6 pages)

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The insulator used for the transmission line is a device that is bonded with a cap, pin, ceramic, and cement to withstand insulation capacity and mechanical load. The insulator design can help to reduce the dispersion of the electric field; thus, the optimization of today's design, especially as demanded power grows, is critical. The designs of four manufacturers were used to perform a comparative analysis. Under dry circumstances of the new product, an electric field distribution study was done with no pollutants attached. Manufacturer D's design has the best voltage uniformity of 24.33% and the arc length of 500 mm or more. Manufacturer C's design has an equalizing voltage of more than 2% higher than that of other manufacturers. The importance of the design of the insulator and the number of connections according to the installation conditions is very efficient for transmission lines that will increase in the future.

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