Through theoretical calculation, the phonon-limited electron mobility in fully depleted strained Si n-channel MOSFETs fabricated on silicon on insulator (i.e., sSOI) and SiGe on insulator (SGOI) was compared between the two structures as a function of Si thickness. In the Si thickness range from 10 nm down to 3 nm, the phonon-limited electron mobility in the sSOI n-MOSFET was about 1.5 times higher than that of a conventional SOI n-MOSFET. In particular, it was found that the electron mobility in the sSOI n-MOSFET was about 3% lower than that in the SGOI n-MOSFET. This difference can be attributed to two physical phenomena: first, that the sSOI n-MOSFET has higher inter-valley scattering rates than does the SGOI n-MOSFET, because of its greater carrier confinements: and second, that some electrons in the inversion layer of the SGOI n-MOSFET tunnel into the SiGe layer. These theoretical results are strongly consistent with previous experimental results.

Al-Fe-V-Si alloy and composites from it were prepared by a powder metallurgy (PM) route as well as by mechanical alloying (MA). Globular particles referred to as α-Al13 consisted of a quaternary silicide of Alx(FeV)ySi and α-AlFeSi diminished after ball milling and grows slightly during the fabrication process. Whereas, the particle in the PM samples grew extensively. For PM samples, the high temperature mechanical strength of the composite is slightly higher than for the unreinforced alloy.