The effect of various electric field intensities on a Cu-field aided lateral crystallization (FALC) process of amorphous silicon(a-Si) films has been studied. The electric field intensity investigated in this study ranged from 15 V/cm to 180 V/cm. The intensity of the Raman spectral peak from the polycrystalline silicon (c-Si) increased monotonically with the electric field intensity during thermal annealing at a temperature of 450oC. The degree of crystallization calculated from the intensity of the Raman peak increased as well and resulted in 82% at the highest electric field of 180 V/cm. The crystallization velocity obtained from the sample at 180 V/cm was about 50 times larger than that from the sample at 15 V/cm. Consequently, it was verified that both the degree of crystallization and crystallization velocity depend strongly on the electric field intensities in FALC process

In this study, the photoadsorption properties of Ag ions in a AgNO3 solution by a TiO2 nano-powder synthesized by a homogeneous precipitation process at low temperature were investigated. It was found that the photocatalytic reduction in the AgNO3 solution occurred by the TiO2 nano-powder even under sun light irradiation, although the reduction of Ag ions was slow with a small adsorption of 9.32 ppm. Notably the Ag adsorption was promoted in dark conditions probably owing to the chestnut-bur shape of the TiO2 nano-powder itself. With the application of UV the Ag ions were completely adsorbed within 120 minutes, showing a more significant photocatalytic reaction. The measured adsorption reaction rate and adsorption equilibrium rate constants were 0.0004 g/minute and 1494.20 (120 m2/g), respectively.