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KCI 등재
3D NAND 플래시메모리 String에 전열어닐링 적용을 가정한 기계적 안정성 분석 및 개선에 관한 연구
Study on Improving the Mechanical Stability of 3D NAND Flash Memory String During Electro-Thermal Annealing
김유진 ( Yu-jin Kim ) , 박준영 ( Jun-young Park )
UCI I410-ECN-0102-2023-500-000578342

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

1. 서 론
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3. 결과 및 고찰
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[자료제공 : 네이버학술정보]
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