Pure BiFeO₃ (BFO) and codoped Bi_0.9A_0.1Fe_0.975Zn_0.025O_3-δ (A=Eu, Dy) thin films were prepared on Pt(111)/ Ti/SiO₂/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the Bi_0.9Eu_0.1Fe_0.975Zn_0.025O_3-δ (BEFZO) and Bi_0.9Dy_0.1Fe_0.975Zn_0.025O_3-δ (BDFZO) thin films were about 36 and 26 μC/cm² at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and 1.21×10^-6 A/cm², respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.