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Candidate
Al-Si 합금의 양극산화거동 및 규소화합물 제어
Anodizing Behavior and Silicides Control in Al-Si Alloy System
박종문 ( Jong Moon Park ) , 김주석 ( Ju Seok Kim ) , 김재권 ( Jae Kwon Kim ) , 김수림 ( Su Rim Kim ) , 박노진 ( No Jin Park ) , 오명훈 ( Myung Hoon Oh )
UCI I410-ECN-0102-2018-500-003805727

The anodic oxidation behavior of Si-containing aluminum alloy for diecasting was investigated. Especially, the property changes during anodization both on aluminum 1050 and 9 weight percentage silicon containing aluminum (Al-9Si) alloys were analyzed by the static current test. In order to fabricate a uniform anodic oxidation film by effect of Al-Si compound, nitric acid containing hydrofluoric acid had been used as a desmutter for aluminum alloy after alkaline etching. It was found that the level of voltage of Al-9Si alloy during the static current test was almost as double as higher than aluminum 1050 through anodization. By adding hydrofluoric acid in the nitric acid electrolyte, the silicon compound on the surface was removed, and the optimum amount of added hydrofluoric acid could be derived. It was also observed that the size of silicon compound formed on the surface could be refined by heat treatment at 500 ℃ and followed water quenching. (Received January 7, 2017; Revised January 13, 2018; Accepted January 26, 2018)

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