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황화급속열처리를 이용한 SnS 박막성장 및 온도의존성 연구
Regular Paper : Study of Growth and Temperature Dependence of SnS Thin Films Using a Rapid Thermal Processing
심지현 ( Ji-hyun Shim ) , 김제하 ( Je Ha Kim )
UCI I410-ECN-0102-2016-560-000701882

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from 200℃ to 500℃ for a time period of 10 to 40 min. At ≤ 300℃, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] . 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
감사의 글
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