Herein, we report the preparation and characterizations of the sulfur (S)-doped TiO2 nanotube (TONT) arrays prepared by a sulfurization process of TONT arrays via electrochemical anodization on a Ti substrate with a pure TONT arrays The S-doped TONT arrays were prepared with the annealing temperature from 450ºC to 550ºC under H2S gas for 10 min, and these reaction conditions corresponded to no modification of the morphological features relative to that of the TONT arrays. Furthermore, the 500ºC annealed S-doped TONT arrays showed enhanced visible light absorption and high electric conductivity, thus resulting in the most improved photocurrent density (2.92 mA cm-2 at 1.0 V vs sat. Ag/AgCl) in the 0.1 M KOH solution as compared with that (0.965 mA cm-2 at 1.0 V vs sat. Ag/AgCl) of TONT arrays. In addition, the small photoactivity in the visible light region for the S-doped TONT arrays was observed up to a 600-nm wavelength. Related work would be discussed.