In this paper, high quality AlN layers were regrown on AlN nanopillar structure with SiO2-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with SiO2-dots relieves the strain in the AlN layer regrown by HVPE.