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FTS 법으로 제작한 태양전지용 AZO 박막의 투입전류에 따른 특성
Properties of AZO thin flim for solar cells with various input current prepared by FTS method
정유섭 ( Yu Sup Jung ) , 김상모 ( Sang Mo Kim ) , 최명규 ( Myung Kyu Choi ) , 김경환 ( Kyung Hwan Kim )
UCI I410-ECN-0102-2015-500-001796265
이 자료는 4페이지 이하의 자료입니다.

The properties of Al doped ZnO (AZO) thin flim for solar cells with various input currents were studied in this paper. Using facing target sputtering with 2wt.% AZO targets, TCO films were deposited on glass(corning 2948) substrate at room temperature. AZO thin films were deposited by 0.2A, 0.4A, 0.6A and 0.8A at the thickness of 300nm. Electrical, optical and structural of thin films investigated by a Hall effect measurement (Ecopia), an UV-VIS spectrometer(HP) and a X-ray diffractometer (Rigaku). As a results, all thin films showed transmittance about 80%, respectively and resistivity was 7.67x 10(-4)Ω-cm at 0.6A.

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