This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (pc) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn`t show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at 800° for 30min., the lowest contact resistivity of 2.90×10-5Ω ㎠ was obtained due to the improved interfacial adhesion.