We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thicknes on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light meission for the wavelengths of 858 and 45 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.