Ferroelectric Cerium-substituted Bi4Ti3O12 thin films with a thickness of 200 nm were deposited using the liquid delivery metal organic chemical vapor deposition process onto a Pt(111)/Ti/SiO₂/Si(100) substrate. At annealing temperature above 600℃, the BCT thin films became crystallized and exhibited a polycrystalline structure. The BCT thin film annealed at 720℃ showed a large remanent polarization (2Pr) of 44.56 uC/cm2 at an applied voltage of 5V. The BCT thin film exhibits a good fatigue resistance up to 1x10 11 switching cycles at a frequency of 1 MHz with applied electric field of ±5 V.