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SiC 박막에 이온빔 배향을 이용한 틸트 발생에 관한 연구
Liquid Crystal Alignment on the SiC Thin Film by the Ion Beam Exposure Method
강형구 ( Hyung Ku Kang ) , 강희진 ( Hee Jin Kang ) , 황정연 ( Jeoung Yeon Hwang ) , 이휘원 ( Whee Won Lee ) , 배유한 ( Yu Han Bae ) , 문현찬 ( Hyun Chan Moon ) , 김영환 ( Young Hwan Kim ) , 서대식 ( Dae Shik Seo ) , 임성훈 ( Sung Hoon Lim ) , 장진 ( Jin Jang )
UCI I410-ECN-0102-2015-500-001803498
이 자료는 4페이지 이하의 자료입니다.

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about 87° of stable pretilt angle was achieved at the range from 30° to 45° of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

[자료제공 : 네이버학술정보]
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