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알루미늄 전해 커패시터용 음극박의 에칭 피트 성장
Etch Pit Growth on Aluminum of Cathode Film for Aluminum Electrolytic Capacitor
김홍일 ( Hong Ii Kim ) , 최호길 ( Ho Gil Choi ) , 김성한 ( Sung Han Kim ) , 김영삼 ( Young Sam Kim ) , 신진식 ( Jin-sik Shin ) , 박수길 ( Soo Gil Park )
UCI I410-ECN-0102-2015-500-001803125
이 자료는 4페이지 이하의 자료입니다.

High surface area electrodes for aluminum electrolytic capacitors are produced by AC electrochemical processes. Optimization of crystallographic etch pit growth on aluminium during AC etching of cathode film for aluminium as electrolytic capacitor has been established. In this work, we present the observations of pit distributions by galvanostatic measurements. The effects of electrolyte concentration, current density, frequency, various pre-treatments and etching time have been studied. The specimen was pretreated in 0.5M NaOH and 1M HCl at 40~60℃, and transferred into a cell containing 1M HCl, then various mol H2SO4 etchant was added. Pit size distributions were determined with scanning electron microscopy (SEM).

[자료제공 : 네이버학술정보]
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