In this paper, multiple regression analysis of the electrical characteristics for HfO₂ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of HfO₂thin films. The input factors on the process are the substrate temperature, Ar gas flow, and O₂ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.