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가속열화된 사이리스터의 커패시턴스 특성
Capacitance Properties of Degraded Thyristor with Temperature and Voltage
서길수 ( Kil Soo Seo ) , 이양재 ( Yang Jae Lee ) , 김형우 ( Hyeng Woo Kim ) , 강인호 ( In Ho Kang ) , 김남균 ( Nam Kyun Kim )
UCI I410-ECN-0102-2015-500-001801858
이 자료는 4페이지 이하의 자료입니다.

In this paper, the capacitance properties of degraded thyristor with temperature and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100 - 10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.

[자료제공 : 네이버학술정보]
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