Laser doping is used as an alternative to thermal annealing for formation of selective emitter Si solar cells. Laser processing has many advantages, such as a simple and low temperature process, high throughput, and low cost ownership. For fabrication of selectively low sheet resistance regions, we used a phosphosilicate glass layer as a dopant source, which was produced after furnace diffusion. We achieved an efficiency of 18.88% by using the laser doping with a PSG layer. (Received September 6, 2012).