Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to 120t. The ITO thin films were crystallized at 50t for Si (001) substrates and at 75t for PET substrate. The I`J`O thin films grown onto PET substrate at 120t were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about 7 x 10 ? cm and a transmittance of about 84% at a wavelength of 550 rim. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.