This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, Si2(CH3)6) as a safe organosilane single precursor in a nonflammable H2/Ar (H2 in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at 1280°C. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields. This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, Si2(CH3)6) as a safe organosilane single precursor in a nonflammable H2/Ar (H2 in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at 1280°C. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.