RF magnetron reactive sputter 방법으로 p-type Si-wafer (100) 기판에 고순도(반경 3 inch) Ti target을이용하여 TiO2 박막들을 제조하였다. Target과 기판간의 거리는 6 cm로 고정하고, 기판온도(Ts)는 100∼500℃, 증착시간은 0.5∼1.5시간, 그리고 RF power는 100∼250W 범위 내에서 조절하여 TiO2 박막을 성장하였다. 각 조건별로 증착한 박막의 결정성을 XRD를 통해 분석하였으며, 표면 이미지와 증착 두께들은 SEM을 통해 분석하였다. RF Magnetron Reactive Sputter 방법을 이용한 TiO2 박막성장 이외에, 차별화된 방법으로 먼저 Ti 박막 층을 먼저 성장 시킨 후, O2 분위기에서 열처리 과정을 통한 TiO2 박막 성장을 시도 하였으며, 이들 두 방법들에 대한 결과들을 비교 분석하였다.을 분석하였다.

TiO2 thin films were deposited on p-type Si-wafer (100) substrates, from pure Ti target with a diameter of 3 inches, employing by a conventional RF magnetron reactive sputter system. For the fixed target-to-substrate distance (6cm), films were deposited with several deposition conditions. Substrate temperature(Ts) was varied from 100 to 500℃. The sputtering was performed at RF powers in the range of 100∼250W for the deposition time of 0.5∼1.5 hours. The crystalline structure of the film was observed by XRD patterns for all films deposited with unique parameters. Both the surface image and the thickness of films were investigated by SEM. In addition, TiO2 thin films were grown by an another way which is two-step process. After depositing Ti thin layer on the substrate, it was annealed at several temperatures, with flowing a mixed gas(Ar+O2). The comparative study of both results for TiO2 thin films, which were grown by RF magnetron reactive sputter and two-step process, was carried out.