In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of N₂ and O₂ gas with ceramic ZnO:(2 wt% Al₂O₃) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the N2 fraction in the mixed N₂ and O₂ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of 1.5 × 10(15)-2.93 × 10(17) cm-3, resistivity in the range of 131.2-2.864 Ωcm, and mobility in the range of 3.99-31.6 cm²V-1s-1 respectively.