광통신용 GaAs 기반 1.3 ㎛ GaAsSb/InGaAs와 GaAsSb/InGaNAs 양자우물 레이저의 광학적특성 시뮬레이션

박승환

한국전기전자재료학회 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) 광통신용 GaAs 기반 1.3 ㎛ GaAsSb/InGaAs와 GaAsSb/InGaNAs 양자우물 레이저의 광학적특성 시뮬레이션

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Regular Paper : Simulation of Optical Characteristics of 1.3 ㎛ GaAs-Based GaAsSb/InGaAs and GaAsSb/InGaNAs Quantum Well Lasers for Optical Communication

박승환 ( Seoung Hwan Park )

한국전기전자재료학회 2011.01

전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) vol. 24 iss. 1 1-6(6pages)

UCI I410-ECN-0102-2012-560-001637187

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Abstract

Optical gain characteristics of 1.3 ㎛ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

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