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고려대학교 공학기술연구소
工學 論文集
VPE 법에 의한 GaAs Epilayer 의 성장조건에 관한 연구
VPE 법에 의한 GaAs Epilayer 의 성장조건에 관한 연구
A Study on the Growth Condition of GaAns Epitaxial Layer Grown by VPE
장태용(Tae Yong Jang),이승무(Seung Moo Lee),최인훈(In Hoon Choi),서상희(Sang Hee Suh)
고려대학교 공학기술연구소
1993.01
工學 論文集
vol. 29
17-24(8pages)
UCI
I410-ECN-0102-2008-530-001262869
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