The effect of dopants on the behavior of metal-induced lateral crystallization (MILC) growth was studied in this work. Two types of dopants (B2H6 and PH3) were doped over 50A Nickel films deposited on amorphous silicon. It was found that the MILC growth rate of The MILC growth rate of B2H6- and PH3doped amorphous silicon (a-Si) thin film by ion mass doping (IMD) is slower than that of intrinsic a-Si. The decrease of growth rate was caused by the bonding of Si-P and the break down of the dangling bond between silicon and hydrogen during bonded ion mass doping. In addition, a phenomenon of growth stoppage at the boundary of the a-Si and ion mass doped range was observed. The rate of MILC growth decreased as dopant density increased.