Mo based alloy electrodes on top of SiO2 layer as gate dielectrics were fabricated for advanced dual metal gate applications. Characteristics of sputtered Mo, MoN, MoSi and MoSiN alloy films were evaluated up to 1000℃ for 15 sec RTA annealing in a nitrogen ambient. MoSix showed a low resistivity of 70 μΩ ㎝ after RTA annealing at 1000℃. The flat band voltage (V(FB)) of MoSix gate electrodes can be controlled by varying the silicon concentration during deposition of metal gate electrodes.