A 2-dimensional hexagonal array of uniformly sized nano-holes, whose average size can be potentially changed from 50 nm to 240 nm, was fabricated using the etched nanosphere lithography (NSL) method. The conventional NSL method utilizing polystyrene beads (PS) coated on a Si substrate often suffers from a loss of uniformity during the etching of the PS beads. It was demonstrated that the uniformity of the hole size and position can be greatly improved by inserting a polyimide (PI) film between the Si substrate and the PS beads. A sufficiently thick (~40 run) PI film can act as a sacrificial layer, minimizing the rebound of the plasma during the reactive ion etching of the PS beads. Hence, the etching of the PS beads stabilized by the PI film can be used to determine the final desired size of the hole. The periodicity of the pattern can also be selected by changing the initial PS bead diameter.