Computer simulations of the dislocation density during Czochralski (CZ) single crystal growth were performed for silicon crystals with 8-inch or 10-inch diameter using a finite element computer code developed by the authors. In the computer code, a dislocation kinetics model called the Haasen-Sumino model was used for the constitutive equation of a crystal at elevated temperatures. The computer code provides the dislocation density distributions and stress distributions during the CZ growth process. In the simulations, two values for the Young`s modulus for the silicon single crystal were used in order to examine the effect of the Young`s modulus on the dislocation density.
