An Ultra - Low - Temperature Poly - Si TFT with Stacked Composite ECR - PECVD Gate Oxide

( Y . J . Tung , X . Meng , T . J . King , P . G . Carey , P . M . Smith , S . D . Theiss , R . Weiss , G . A . Davis , V . Aebi )

한국전기전자재료학회 1998.12

E²M-전기 전자와 첨단 소재 vol. 11 iss. 12 77-78(2pages)

UCI I410-ECN-0102-2008-560-001249117

More

Cite Copy URL Bookshelf

This article is 4 pages or less.

Abstract

Keywords

Table of Contents

References (0)

[자료제공 : 네이버학술정보]