18.97.9.174
18.97.9.174
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저온 플라스마 공정을 이용한 광촉매 박막 제조
Preparation of Photocatalytic Thin Film by Low Temperature Plasma Process
민호 ( Min Ho ) , 김병훈 ( Kim Byeong Hun ) , 김종호 ( Kim Jong Ho ) , 조동련 ( Jo Dong Lyeon )
응용화학 vol. 7 iss. 2 723-726(4pages)
UCI I410-ECN-0102-2009-570-003220534
This article is 4 pages or less.

TiO₂thin films were deposited onto glass plates by PECVD for the preparation of photocatalytic thin film. TTIIP was used as a precursor and mixed with oxygen and argon. Effects of deposition temperature, discharge power, deposition pressure and O₂/Ar gas flow ratio on the structure of the film and the photocatalytic performance were investigated. The TiO₂films showed the structural change from amorphous state to anatase crystalline state at 400℃. A film prepared at 400℃, 10W, gas flow ratio of 20sccm/100sccm, and 2.1×10^(-1)torr showed the best photocatalytic performance, which was evaluated based on the degradation efficiency of methylene blue under UV-A light. The photocatalytic performance depended more on the deposition temperature than the discharge power.

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