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18.97.9.171
한국어
ENG
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한국전기전자재료학회
E²M-전기 전자와 첨단 소재
Self - Heating in High - Power AIGaN - GaN HFETs
Self - Heating in High - Power AIGaN - GaN HFETs
( R . Gaska , A . Osinsky , J . W . Yang , M . S . Shur )
한국전기전자재료학회
1998.10
E²M-전기 전자와 첨단 소재
vol. 11 iss. 10
175-176(2pages)
UCI
I410-ECN-0102-2008-560-001251280
₩ 1,000
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