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한국전기전자재료학회 E²M-전기 전자와 첨단 소재 A Ku Band T - Shaped Gate GaAs Power MESFET with Kigh Breakdown Voltage for Satellite Communications
A Ku Band T - Shaped Gate GaAs Power MESFET with Kigh Breakdown Voltage for Satellite Communications
( Jong Lam Lee , Hae Cheon Kirn , Jae Kyoung Mun , Sung Jae Maeng )
한국전기전자재료학회 1998.10
E²M-전기 전자와 첨단 소재 vol. 11 iss. 10 175-175(1pages)
UCI I410-ECN-0102-2008-560-001251295
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