A Self - Aligned Gate GaAs MESFET with P - Pocket Layers for High Efficiency Linear Power Amplifiers

( Kazuya Nishihori , Yoshiaki Kitaura , Mayumi Hirose , Masakatsu Mihara , Masami Nagaoka , Naotaka Uchitomi )

한국전기전자재료학회 1998.10

E²M-전기 전자와 첨단 소재 vol. 11 iss. 10 174-174(1pages)

UCI I410-ECN-0102-2008-560-001251311

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