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18.97.9.169
18.97.9.169
A Self - Aligned Gate GaAs MESFET with P - Pocket Layers for High Efficiency Linear Power Amplifiers
( Kazuya Nishihori , Yoshiaki Kitaura , Mayumi Hirose , Masakatsu Mihara , Masami Nagaoka , Naotaka Uchitomi )
UCI I410-ECN-0102-2008-560-001251311
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