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18.97.14.86
한국어
ENG
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한국전기전자재료학회
E²M-전기 전자와 첨단 소재
Electrical Stress in High Permittivity TiO2 Gate Dielectric MOSFETs
Electrical Stress in High Permittivity TiO2 Gate Dielectric MOSFETs
( Hyeon Seag Kim , S . A . Campbell , D . C . Gilmer )
한국전기전자재료학회
1998.10
E²M-전기 전자와 첨단 소재
vol. 11 iss. 10
94-99(6pages)
UCI
I410-ECN-0102-2008-560-001252196
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