The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits(IC) and the increased use of polymers in electronic packaging. In this paper plasma-polymerized thiophene films were considered as a possible candidate for an interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. The protective ability of above films as a function RF power in an 3.5 wt.% NaCl solution was examined by electrochemical methods and contact angle measurement. The protective efficiency of the film increased with increasing RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.