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18.97.14.88
18.97.14.88
플라즈마 화학 증착에서 증착압력에 따른 TiN 박막의 성장거동
The Study on the Behavior of TiN Thin Film Growth According to Deposition Pressure in PECVD Process
이종훈 , 남옥현 , 이인우 , 김문일 ( Z . H . Lee , O . H . Nam , I . W . Lee , M . I . Kim )
UCI I410-ECN-0102-2009-570-007370015

In this study, we tried to describe the quantitative model of TiN film structure which was deposited by PECVD process. The macro-grain growth behavior was studied at the various deposition pressures and times. As a result, It was confirmed that TiN films had the typical Zone 1 structure, and macro-columnar grains were, without reference to the deposition pressure, grown ballistic type by the growth-death competition following the equation, Y=aX², approximately obtained by regression analysis. Also, the thickness and the crystallization of TiN thin films were increased, the chlorine contents were decreased according to the decreasing of deposition pressure.

[자료제공 : 네이버학술정보]
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