To investigate the influence of TiCl₄, N₂inlet fraction on the TiN layer, TiN film was deposited onto the STC3 and STD11 steel from gas mixtures of TiCl₄/N₂/H₂by the radio frequency plasma assisted chemical vapor deposition. The films were deposited at various TiCl₄, N₂inlet fractions. The results showed that the film thickness was increased with TiCl₄, inlet fraction. However, while the thickness was increased with N₄inlet fraction under 0.4 the thickness was decreased with increasing N₂ inlet fraction over 0.4. The density of deposited films was varied as TiCl₄, N₂ inlet fraction and its maximum value was about 5.6g/㎤. The contents of chlorine were increased with increasing TiCl₄inlet fraction and nearly constant with increasing N₂inlet fraction.