In order to analyze the mechanism of semiconductor device damages by ESD, this paper adopts a new charged-device model(CDM), field-induced model(FCDM), simulator the is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. The high voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoid premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The FCDM simulator places the device at a high voltage without transferring charge to it, by using a non-contacting electrode. The only charge transfer in the FCDM simulator happens during the discharge. This paper examine the field charging mechanism, measure device thresholds, and analyze failure modes. The FCDM simulator provides a fast and inexpensive test that faithfully represents factory ESD hazards. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. Also the results in this paper can be used for to prevent semiconductor devices from ESD hazards.