Czochralski off-grade polycrystalline silicon was directionally solidified at a growth rate of 0.2∼1.0㎜/min using split reusable graphite molds, coated with Si₃N₄powder. The impurity concentration and grain size of the silicon wafers which affect the conversion efficiency of the solar cell were measured and compared with the reference values reported for high efficiency solar cells. The resultant grain diameter was above 1.0㎜. X-ray diffraction analysis has been performed to examine the preferred orientation in each of the silicon ingots. According to the X-ray diffraction analysis, preferred orientation was(111). The carrier concentration increases, while the resistivity decreases with increasing growth rate and fraction solidified.