산화아연이나 산화티타늄에 비해 더 짧은 파장의 자외선을 흡수하는 산화텔루륨 박막의 광여기 상태를 알아보기 위하여 전하발생물질(무금속프탈로시아닌)과 전하수송물질(하이드라존)을 사용하여 가시부까지 확장시켰다. 산화텔루륨을 중심으로 금속 산화물들의 표면 광기전력를 측정하여 산화텔루륨이 광기전력 효과가 있음을 알 수 있었고, 열분무법에 의해 만들어진 안정한 금속산화물 박막의 광전류를 측정한 결과 신화텔루륨의 개방 광전압이 양의 값을 나타내었고, 정전특성으로부터 광 응답성을 가지는 기질임을 알 수 있었다.

Photoexcitation mechanism of tellurium dioxide thin film, which absorb shorter wavelength of UV(286~300nm) compare to zinc oxide (386nm), was investigated using a charge generation material (phthalocyanine) and charge transport material (hydrazone) in visible range. The excited state of TeO_2 thin film was observed by micro surface potential meter. The metal oxide thin films were prepared by spray pyrolysis methodology and were identified by X-ray photoelectron spectroscopy and X-ray diffraction analysis. The transparent metal oxide thin films were prepared at 450 ~ 500℃and their photoconductivities were determined using photocurrent measurements. From the surface photovoltage and photo-induced discharge curve of the TeO_2 film, it was concluded that the TeO_2 system can be used as the substrate of the electrophotography same as ZnO or TiO_2.