For the CuBr-doped 85% Bi₂Te₃-15% Bi₂Se₃ single crystals, the temperature dependences of Seebeck coefficient, electrical resistivity, thermal conductivity, and ftgure-of-merit have been characterized at temperatures ranged from 77K to 600K. Comparing to 85% Bi₂Te₃ 15% Bi₂Se₃, the (m^*/m_0)^(3/2). μc of the CuBr-doped 85% Bi₂Te₃ - 15% Bi₂Se₃ specimens was higher than that of the undoped specimens indicating that the addition of CuBr was effective for the improvement of figure-of-merit. Electron concentration was increased with increasing CuBr content, decresing the Seebeck coefficient and electrical resistivity, and shifting the maximum of figure-of-merit to higher temperatures. A maximum figure-of-merit obtained in these experiments was 2.2×10^(-3)/K for the 0.03 wt% CuBr-doped 85% Bi₂Te₃ 15% Bi₂Se₃ single crystal.