In order to increase the growth rate of Ni Metal Induced Lateral Crystallization(MILC) of amorphous Si which shows acceptable electrical properties. Pd thin films were deposited on amorphous Si with a distance to Ni deposited area. The shorter the space between the Ni and Pd films, the faster the rate of Ni MILC, and when the space was 60 ㎛ the growth rate was 7.5 ㎛/hr. Through TEM microstructural analysis and investigation on relationships between the space and growth rate the enhanced growth rate of Ni-MILC turned out to be due to stresses generated by the formation of Pd₂Si under/at Pd deposited area. Using Pd assisted. Ni-MILC method, 0.8 ㎛/hr of MILC growth rate could be obtained at the temperature as low as 450℃.