SiC coated WC powders were obtained by a single step carburization of SiO₂ coated W powder. The sinterability of the single step carburized (W-Si)C powders were investigated and compared with the dual step carburized powders which were obtained by carburizing of the powder of SiO₂ powders coated on precarburized WC powders. Silica was coated on the surface of W powder, and the powder was carburized at 1450℃, in H₂ atmosphere. As the amount of coated silica increased from 0.6wt% to 1.2wt%, SiC coated layer thickness increased from 20A˚ to 80A˚. After carburization, the specific surface area decreased. Particle size of the cariburized powder was increased with the coated amount of silica. WC-SiC powder was milled with 10wt% Ni powder, and it was sintered at 1450℃ in vacuum atmosphere after pre-sintering. The sinterability of the single step carburized powders was found to be the same as that of the dual step carburized powders. The exposure time of the carburized powders in the air atmosphere did not affect the sinterability within a week.