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플라즈마 화학증착된 TiC 박막의 고온거동 (2) ( 화학조성 및 결합상태의 변화 )
High Temperature Behavior of TiC Films Deposited by PECVD (1) ( Variation in Chemical Composition and State )
남옥현(Ok Hyun Nam), 이인우(In Woo Lee), 김문일(Moon Il Kim)
UCI I410-ECN-0102-2008-580-001840989

This paper is intended as an investigation of high temperature behavior of TiC films deposited on the SKH9 tool steels by PECVD. Vacuum annealing of SKH9/TiC samples was performed in the temperature range of 700∼1000℃, and the variation in chemical composition and state was studied by AES, RGA and XPS analysis, and also micro hardness and scratch test was conducted. By vacuum annealing, Ti/C ratio of TiC films became about 1, and chlorine and oxygen contents in the films decreased. The chemical state of chlorine in the TiC lattice was Ti-Cl or Ti-C-H-Cl banding and evaporated to form Cl₂ or HCl with vacuum annealing. Oxygen formed TiO₂, TiO_xCl, H₂O and Ti-C-H-O compound. With the increase of the annealing temperature, the amount of TiO₂ bonding increased, but total oxygen content in the films decreased because of evaporation of H₂O or decomposition of TiO_xCl and Ti-C-H-O bond. Judging from the above results, it is obvious that hydrogen exists in the TiC films. Also, The micro hardness and critical load of TiC films decreased with the vacuum annealing.

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