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SCIE SCOPUS
전해축전기용 고순도 알루미늄박의 전해에칭
Electro - Etching of High Purity Aluminum Foil for electrolytic Capacitor
최창희(Jae Han Jeong), 오규환(Chang Hee Choi), 이동녕(Kyu Hwan Oh), 정재한(Dong Nyung Lee)
UCI I410-ECN-0102-2008-580-001842630

A study has been made of the fabrication condition for obtaining the cube texture of high purity aluminum foils and of electrochemical etching of the aluminum foil. The cube texture of high purity aluminum foils of 110㎛ in thickness was obtained by cold rolling, followed by annealing above 400℃ for 1 hour under vacuum. The microstructures of the cold rolled and heat treated aluminum foils were studied. The effects of current density and chloride ion concentration on the etch pit morphology and capacitance were studied. The etch tunnel size decreases and the etch tunnel density increases with increasing current density and chloride ion concentration.

[자료제공 : 네이버학술정보]
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