Adhesion is one of the most important properties of coated TiN layer for the wear resistant application. This study is focused on improving the adhesion of a TiN film grown by PECVD method. The adhesion was significantly affected by the microstructure of a Ti interlayer. In order to investigate a relationship between the adhesion and the microstructure of a Ti interlayer, the analyses of XRD, EDS and SEM were performed. As a pressure was decreased or the negative bias voltage was applied to the substrate while sputter-depositing a Ti interlayer, the degree of preferred orientation increased. The Ti film exhibited a preferred growth orientation of(002) which matches with TiN (111) plane coherently. It was found that the adhesion of a TiN layer decreased with increasing the degree of preferred orientation of a Ti interlayer. This tendency was explained with the phenomena of stress accumulation and relaxation at the interfaces. The adhesioin of the TiN film grown by PECVD was improved up to 45N when the crystallization and the preferred orientation of a Ti interlayer were suppressed by depositing at a relatively high pressure.